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US 2010/0140696 A1Published application
Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics
AssigneeFairchild Semiconductor Corporation
InventorsJoseph A. Yedinak, Daniel Calafut, Dean E. Probst
Life of this patent
Estimating the term…
Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
Claims38
1-22. (canceled)
A semiconductor device comprising:
- a first trench extending into a semiconductor region and having a first end and a second end;
- a first dielectric layer lining opposing sidewalls of the first trench;
- a first shield electrode disposed in the first trench;
- a second trench extending into the semiconductor region and having a first end and a second end;
- a second dielectric layer lining opposing sidewalls of the second trench;
- a second shield electrode disposed in the second trench;
- and
- a first well region of a first conductivity type disposed in the semiconductor region and between the first and second trenches, the first well region being spaced from the first end of the first trench by at least a first distance;
- and
- wherein there is no other well region of a first conductivity type disposed between the first well region and the first end of the first trench.
7 more elements
A semiconductor device comprising:
- a first trench extending into a semiconductor region and having a first end and a second end;
- a first dielectric layer lining opposing sidewalls of the first trench;
- a first shield electrode disposed in the first trench;
- a second trench extending into the semiconductor region and having a first end and a second end;
- a second dielectric layer lining opposing sidewalls of the second trench;
- a second shield electrode disposed in the second trench;
- a first well region of a first conductivity type disposed in the semiconductor region and between the first and second trenches, the first well region being spaced from the first end of the first trench by at least a first distance;
- and
- a second well region of a first conductivity type disposed between the first well region and the first end of the first trench, the second well region being more lightly doped than the first well region.
6 more elements
A trench shielded Schottky barrier rectifier device comprising:
- a first trench extending into a semiconductor region and having a first end and a second end;
- a first dielectric layer lining opposing sidewalls of the first trench;
- a first shield electrode disposed in the first trench;
- a second trench extending into the semiconductor region and having a first end and a second end;
- a second dielectric layer lining opposing sidewalls of the second trench;
- a second shield electrode disposed in the second trench;
- and
- a mesa region defined by the first and second trenches, the mesa region having a width, height, and top surface;
- and
- a Schottky contact disposed at the top surface of the mesa, the Schottky contact having a first end spaced from the first end of the first trench by at least a first distance.
7 more elements
A semiconductor device comprising:
- a first trench extending into a semiconductor region and having a first end and a second end;
- a first dielectric layer lining opposing sidewalls of the first trench;
- a first electrode disposed in the first trench;
- a second trench extending into the semiconductor region and having a first end and a second end;
- a second dielectric layer lining opposing sidewalls of the second trench;
- a second electrode disposed in the second trench;
- a well region of a first conductivity type disposed in the semiconductor region and between the first and second trenches, the well region having a first end;
- and
- a conductive trace disposed over the first and second trenches, the conductive trace having a length running perpendicular to the trenches and a width that is less than the length, the conductive trace having a portion spaced from a portion of the semiconductor region disposed between the trenches by a first distance, the portion of the trace having a first and second sides parallel to the trace's length, the first side being closer to the first end of the well region than the second side;
- and
- wherein the first end of the well region is spaced from the second side of the conductive trace by at least a second distance.
8 more elements
44-45. (canceled)
A semiconductor device comprising:
- at least a first device area and a second device area disposed at the surface of a semiconductor region, the second device area being adjacent to the first device area and spaced apart from the first device area;
- a connection region disposed between the first and second device areas;
- a first trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region;
- a first dielectric layer lining opposing sidewalls of the first trench;
- a first electrode disposed in the first trench;
- and
- a first conductive trace disposed over the first trench in the connection region and electrically coupled to the first electrode in the connection region.
4 more elements
60-70. (canceled)
Dependencies are inferred from the claim text.