Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates
AssigneeAlpha and Omega Semiconductor Incorporated
InventorFrancois Hébert
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Abstract
This invention discloses an inverted field-effect-transistor (iT-FET) semiconductor device that includes a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate. The semiconductor power device further comprises a trench-sidewall gate placed on sidewalls at a lower portion of a vertical trench surrounded by a body region encompassing a source region with a low resistivity body-source structure connected to a bottom source electrode and a drain link region disposed on top of said body regions thus constituting a drift region. The drift region is operated with a floating potential said iT-FET device achieving a self-termination.
Claims21
An inverted field-effect-transistor (iT-FET) semiconductor device comprising:
- a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate further comprising a trench-sidewall gate placed on sidewalls at a lower portion of a vertical trench surrounded by a body region encompassing a source region with a low resistivity body-source structure connected to a bottom source electrode and a drain link region disposed on top of said body regions thus constituting a drift region wherein said drift region is operated with a floating potential said iT-FET device achieving a self-termination.
The iT-FET semiconductor device of claim 10 wherein:
- said drain further comprising a N+ doped region disposed on said top of said substrate.
A method for manufacturing an iT-FET semiconductor device comprising:
- forming a source on a bottom and a drain on a top surface of a semiconductor and forming a trenched gate as a gate layer attached to trench sidewalls for controlling a vertical channel along said trenched gate in said semiconductor substrate.
Dependencies are inferred from the claim text.