Gate of trench type mosfet device and method for forming the gate
AssigneeDongbu HiTek Co., Ltd.
InventorJi-Houn Jung
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Abstract
A gate of a trench type MOSFET device and a method of forming a gate. A gate of a trench type MOSFET device may include a gate oxide film formed on and/or over a trench type gate poly such that parasitic capacitance may be produced in a gate poly. An electric field may be substantially uniformly formed in a MESA region surrounding a gate poly. An overcurrent may be substantially prevented from flowing into a MOS channel around a gate. A gate oxide film may be substantially prevented from being destroyed and/or leakage may be substantially prevented. Reliability of a device may be maximized.
Claims20
An apparatus comprising:
- a first gate oxide film formed over a trench region;
- a first polysilicon film deposited over said first gate oxide including a predetermined thickness;
- a second gate oxide film deposited over said first polysilicon film;
- and
- a second polysilicon film over said second gate oxide film.
A method comprising:
- forming a first gate oxide film over a trench region;
- forming a first polysilicon film over a surface of a semiconductor substrate including said trench region;
- forming a photoresist mask over said first polysilicon film exposing said trench region;
- etching said first polysilicon film using said photoresist mask such that said first polysilicon film remains having a predetermined thickness over said trench region;
- forming a second gate oxide film over said first polysilicon film said over trench region;
- and
- forming a second polysilicon film over a surface of said semiconductor substrate.
Dependencies are inferred from the claim text.