Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics

A semiconductor device comprising:

• a plurality of primary trenches extending into the semiconductor region, each of the plurality of trenches having a first end, a second end, and opposing sidewalls lined with a dielectric layer, each trench further having a shield electrode;
• an end trench extending into the semiconductor region and disposed adjacent to and spaced from the first ends of the primary trenches, the end trench having opposing sidewalls lined with a dielectric layer and an electrode disposed in the end trench;
• and
• a gap region disposed between the end trench and the first ends of the primary trenches, the gap region being at a floating potential.

A semiconductor device comprising:

• a plurality of primary trenches extending into the semiconductor region and arranged in a array of a plurality of inner primary trenches disposed between a first outer primary trench and a second outer primary trench, each primary trenches having a first end, a second end, and opposing sidewalls lined with a dielectric layer, each trench further having a shield electrode;
• an perimeter trench extending into the semiconductor region, the perimeter trench having opposing sidewalls lined with a dielectric layer and an electrode disposed in the perimeter trench, the perimeter trench having a first leg disposed adjacent to and spaced from the first ends of the primary trenches, a second leg disposed adjacent to and spaced from the first outer primary trench, and a corner disposed between the first and second legs;
• and
• a gap region disposed between the perimeter trench and the first ends of the primary trenches;
• and
• wherein the first end of the first outer primary trench is spaced further from the perimeter trench than the first ends of at least one inner primary trench.