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US 2010/0140688 A1Published application
Semiconductor device and method of forming semiconductor device
AssigneeElpida Memory, Inc.
InventorHiroyuki FUJIMOTO
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Abstract
A semiconductor device includes a first semiconductor pillar, a first insulating film covering a side face of the first semiconductor pillar, a first electrode covering the first insulating film, a second semiconductor pillar, a second insulating film covering a side face of the second semiconductor pillar, and a second electrode covering the second insulating film. The top level of the second electrode is higher than the top level of the first electrode.
Claims20
A semiconductor device comprising:
- a substrate;
- a first semiconductor pillar extending from the substrate;
- a first insulating film covering a side face of the first semiconductor pillar;
- a first electrode covering the first insulating film, the first electrode having a top portion which is closer to the substrate than a top of the first semiconductor pillar;
- a second semiconductor pillar extending from the substrate;
- a second insulating film covering a side face of the second semiconductor pillar;
- and
- a second electrode covering the second insulating film, the second electrode having a top portion which is farther to the substrate than a top of the second semiconductor pillar.
5 more elements
A semiconductor device comprising:
- a first semiconductor pillar;
- a first insulating film covering a side face of the first semiconductor pillar;
- a first electrode covering the first insulating film;
- a second semiconductor pillar;
- a second insulating film covering a side face of the second semiconductor pillar;
- and
- a second electrode covering the second insulating film, the top level of the second electrode being higher than the top level of the first electrode.
4 more elements
A method of forming a semiconductor device, the method comprising:
- forming first and second semiconductor pillars extending from a substrate;
- forming first and second insulating films, the first insulating film covering a side face of the first semiconductor pillar, and the second insulating film covering a side face of the second semiconductor pillar;
- forming first and second electrodes, the first electrode covering the first insulating film, the second electrode covering the second insulating film, the first and second electrodes being electrically connected to each other;
- and
- partially removing the first electrode so that the top level of the first electrode is lower than the top level of the first semiconductor pillar, and the top level of the second electrode remains higher than the top level of the second semiconductor pillar.
2 more elements
Dependencies are inferred from the claim text.