Nonvolatile Memory Devices
AssigneeSamsung Electronics Co., Ltd.
InventorsPil-Kyu Kang, Daelok Bae, Jongwook Lee, Seungwoo Choi, Yong-Hoon Son, Jong-Hyuk Kang, Jung Ho Kim
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Abstract
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.
Claims14
-7. (canceled)
A semiconductor device comprising:
- a plurality of memory cell blocks each having a memory cell array where a plurality of memory cells are arrayed and row and column decoders for accessing the memory cells,
- wherein the row and column decoders are disposed in horizontal and vertical directions of the memory cell array so that the plurality of memory cell blocks forms an L shape;
- and
- wherein any one of the plurality of L-shaped memory cell blocks comes in contact with the row and column decoders of another L-shaped memory cell block.
A method of arranging cell blocks of a semiconductor device, the method comprising:
- providing a plurality of L-shaped cell blocks each having a cell array and row and a plurality of column decoders disposed in horizontal and vertical directions of the cell array;
- and
- arranging the plurality of L-shaped cell blocks in a diagonal direction interesting the horizontal and vertical directions by allowing any one of the plurality of L-shaped cell blocks to come in contact with row and column decoders of another L-shaped cell block.
Dependencies are inferred from the claim text.