Nonvolatile semiconductor memory device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorYoshio OZAWA
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Abstract
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface of the trench, and a channel silicon crystalline film is formed on the silicon oxide film. Next, a silicon oxide layer is formed at an interface between the silicon oxide film and the channel silicon crystalline film by performing thermal treatment in an oxygen gas atmosphere.
Claims20
A method for manufacturing a nonvolatile semiconductor memory device, comprising:
- forming a charge storage film, a tunnel insulating film, and a channel film made of a silicon crystal in this order on a gate electrode;
- and
- forming a silicon oxide layer at an interface between the tunnel insulating film and the channel film by performing thermal treatment in an oxygen gas atmosphere.
A method for manufacturing a nonvolatile semiconductor memory device, comprising:
- forming a charge storage film, a tunnel insulating film, and a channel film made of a silicon crystal in this order on a gate electrode;
- and
- forming a silicon oxynitride layer at an interface between the tunnel insulating film and the channel film by performing thermal treatment in a nitrogen monoxide gas atmosphere.
A nonvolatile semiconductor memory device comprising:
- a substrate;
- a stacked body provided on the substrate, the stacked body including a plurality of interlayer insulating films and gate electrodes alternately stacked therein, and the stacked body including a trench;
- a charge storage film provided on an inner surface of the trench;
- a tunnel insulating film provided on the charge storage film;
- and
- a channel film provided on the tunnel insulating film and made of a silicon crystal,
- one of a silicon oxide layer and a silicon oxynitride layer being formed at an interface between the tunnel insulating film and the channel film.
Dependencies are inferred from the claim text.