Nonvolatile semiconductor memory device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsIsao KAMIOKA, Yoshio OZAWA, Katsuyuki SEKINE
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Abstract
In a nonvolatile semiconductor memory device, a tunnel insulating layer, a charge storage layer and a charge block layer are formed on a silicon substrate in this order, and a plurality of control gate electrodes are provided above the charge block layer. Moreover, a cap layer made of silicon nitride is formed between the charge block layer and each of the control gate electrode, the cap layer being divided for each gate control electrode.
Claims20
A nonvolatile semiconductor memory device comprising:
- a semiconductor member;
- a tunnel insulating layer provided on a surface of the semiconductor member;
- a charge storage layer provided on the tunnel insulating layer;
- a charge block layer provided on the charge storage layer;
- a plurality of control gate electrodes provided above the charge block layer and arranged so as to be spaced from each other;
- and
- a cap layer provided between the charge block layer and each of the control gate electrodes and made of silicon nitride,
- the cap layer being divided for each of the control gate electrodes.
A nonvolatile semiconductor memory device comprising:
- a semiconductor member;
- a tunnel insulating layer provided on a surface of the semiconductor member;
- a charge storage layer provided on the tunnel insulating layer;
- and
- a plurality of control gate electrodes provided on the charge storage layer and arranged so as to be spaced from each other,
- the charge storage layer being divided for each of the control gate electrodes.
A method for manufacturing a nonvolatile semiconductor memory device, comprising:
- forming a multilayer structure body by alternately forming conductive films primarily composed of silicon and interlayer insulating films primarily composed of silicon oxide;
- forming a trench in the multilayer structure body to expose the conductive films and the interlayer insulating films to an inner surface of the trench;
- forming a cap layer made of silicon nitride by exposing the inner surface of the trench to an atmosphere containing nitrogen radicals to selectively nitridize an exposed surface of the conductive films;
- forming a charge block layer on the inner surface of the trench;
- forming a charge storage layer on the charge block layer;
- forming a tunnel insulating layer on the charge storage layer;
- and
- forming a semiconductor member on the tunnel insulating layer.
Dependencies are inferred from the claim text.