Cmos image sensor with improved backside surface treatment
AssigneeOmniVision Technologies, Inc.
InventorHoward E. Rhodes
Life of this patent
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Abstract
An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects.
Claims18
A method of fabricating an array of backside illuminated (“BSI”) image sensors, comprising:
- fabricating front side components of the BSI image sensors into a front side of the array;
- implanting a dopant layer into a backside of the array, the dopant layer establishing a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array;
- annealing at least a portion of the dopant layer;
- and
- forming a surface treatment on the backside of the dopant layer to cure surface defects.
A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor array, comprising:
- an array of photosensitive regions disposed within a semiconductor layer, the photosensitive regions sensitive to light incident on a backside of the BSI CMOS image sensor array;
- a dopant layer disposed in a backside of the semiconductor layer establishing a dopant gradient to encourage photo-generated charge carriers to migrate towards a front side of the array;
- and
- a surface treatment layer on the backside of the dopant layer to cure surface defects.
Dependencies are inferred from the claim text.