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US 2010/0140674 A1Published application
Mosfet with multiple fully silicided gate and method for making the same
AssigneeInternational Business Machines Corporation
InventorsZhijiong Luo, Huilong Zhu
Life of this patent
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Abstract
A field-effect transistor is provided. The field-effect transistor includes a gate structure including a fully silicided gate material overlying a gate dielectric disposed on a substrate, the fully silicided gate material having an upper region and a lower region, wherein the lower region has a first lateral dimension in accordance with a lateral dimension of the gate dielectric, and the upper region has a second lateral dimension different from the first lateral dimension.
Claims11
A field-effect transistor comprising:
- a gate structure including a fully silicided gate material overlying a gate dielectric disposed on a substrate, the fully silicided gate material having an upper region and a lower region, wherein the lower region has a first lateral dimension in accordance with a lateral dimension of the gate dielectric, and the upper region has a second lateral dimension different from the first lateral dimension.
A field-effect transistor comprising:
- a gate including
- a gate dielectric overlying a substrate, and
- a multiple fully silicided gate structure overlying the gate dielectric, having
- a top region of a first silicide material and having a width in accordance with a width of the gate dielectric,
- a middle region of a second silicide material and having a width greater than the width of the top region, the top region overlying the middle region and in contact therewith, and
- a lower region of the second silicide material contiguous with the middle region and having a width in accordance with the width of the gate dielectric.
3 more elements
Dependencies are inferred from the claim text.