Field effect transistor
AssigneeNEC Electronics Corporation
InventorsMasayuki AOIKE, Yasunori Bito
Life of this patent
Estimating the term…
Abstract
A field effect transistor includes a Schottky layer; a stopper layer formed of InGaP and provided in a recess region on the Schottky layer; a cap layer provided on the stopper layer and formed of GaAs; and a barrier rising suppression region configured to suppress rising of a potential barrier due to interface charge between the stopper layer and the cap layer. The cap layer includes a high concentration cap layer, and a low concentration cap layer provided directly or indirectly under the high concentration cap layer and having an impurity concentration lower than the high concentration cap layer.
Claims14
A field effect transistor comprising:
- a Schottky layer;
- a stopper layer formed of InGaP and provided in a recess region on said Schottky layer;
- a cap layer provided on said stopper layer and formed of GaAs;
- and
- a barrier rising suppression region configured to suppress rising of a potential barrier due to interface charge between said stopper layer and said cap layer,
- wherein said cap layer comprises:
- a high concentration cap layer;
- and
- a low concentration cap layer provided directly or indirectly under said high concentration cap layer and having an impurity concentration lower than said high concentration cap layer.
Dependencies are inferred from the claim text.