Semiconductor device and method of manufacturing the semiconductor device
AssigneeElpida Memory, Inc.
InventorKazuhiro NOJIMA
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming silicon pillar 11 on substrate 10, forming a protective film which covers an upper end portion and a lower end portion of a side surface of silicon pillar 11, forming a constricted portion by anisotropic etching in a portion of the side surface of silicon pillar 11 which is not covered with the protective film after forming the protective film, removing the protective film after forming the constricted portion, forming gate oxide film 12 which covers the side surface of silicon pillar 11 in which the constricted portion is formed, and forming gate electrode 13 which covers gate oxide film 12.
Claims5
A method of manufacturing a semiconductor device, comprising:
- forming a silicon pillar on a substrate;
- forming a protective film which covers an upper end portion and a lower end portion of a side surface of the silicon pillar;
- forming a constricted portion by anisotropic etching in a portion of the side surface of the silicon pillar which is not covered with the protective film, after forming the protective film;
- removing the protective film after forming the constricted portion;
- forming a gate oxide film which covers the side surface of the silicon pillar in which the constricted portion is formed, after removing the protective film;
- and
- forming a gate electrode which covers the gate oxide film.
A semiconductor device comprising:
- a capacitor;
- and
- a transistor disposed by being superposed on the capacitor and connected to the capacitor in series, the transistor comprising:
- a silicon pillar which is formed on a constricted portion in which a particular crystal plane exposed largely in comparison with other crystal planes, the silicon pillar being formed on a substrate;
- a gate oxide film formed which covers a side surface of the silicon pillar;
- and
- a gate electrode which covers the gate oxide film.
Dependencies are inferred from the claim text.