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US 2010/0140670 A1Published application
Integration of mems and cmos devices on a chip
AssigneeHoneywell International Inc.
InventorsAndy Peczalski, Robert E. Higashi, Gordon Alan Shaw, Thomas Keyser
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Abstract
A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.
Claims20
A method comprising:
- bonding a wafer to a top surface layer having contacts formed to CMOS circuitry;
- removing a handle wafer from one of the top or bottom of the CMOS circuitry;
- and
- forming MEMS devices in a remaining silicon layer.
1 more element
A method comprising:
- forming CMOS circuitry on one or more silicon on insulator layers of a first wafer;
- bonding a second wafer to the first wafer;
- removing one of the first and second wafers to expose a MEMS device layer;
- forming at least one MEMS device in the MEMS device layer;
- and
- forming electrical connections between the at least one MEMS device to the CMOS circuitry.
3 more elements
A semiconductor chip comprising:
- a CMOS circuit supported by silicon on insulator layer of a first wafer;
- a second wafer bonded to the first wafer on the side of the first wafer supporting the CMOS circuit, wherein a portion of the first or second wafer is removed to expose a MEMS formation layer separated from the CMOS circuit by at least one silicon on insulator layer.
Dependencies are inferred from the claim text.