Shallow trench isolation regions in image sensors

An image capture device comprising:

• an image sensor comprising:
• an imaging area that includes a plurality of pixels each including a charge storage region formed in a substrate;
• one or more trench isolation regions formed in the substrate, wherein each trench isolation region includes a trench having side wall surfaces and a bottom surface;
• and
• a passivation implantation region contiguously surrounding the side wall and bottom surfaces of each trench isolation region, wherein a portion of each passivation implantation region that is laterally adjacent to a respective charge storage region resides only in an isolation gap region disposed between the respective charge storage region and a respective trench isolation region and does not substantially reside under the charge storage region.

A method of fabricating an image sensor having a plurality of pixels, with each pixel including a charge storage region formed in a substrate, the method comprising:

• forming one or more trench isolation regions in the substrate, wherein each trench isolation region includes a trench having side wall surfaces and a bottom surface;
• annealing the image sensor;
• implanting at low energy one or more dopants into the side wall and bottom surfaces of each trench isolation region to form a passivation implantation region that contiguously surrounds the side wall and bottom surfaces of each trench isolation region, wherein a portion of each passivation implantation region that is laterally adjacent to a respective charge storage region resides only in an isolation gap region disposed between the respective charge storage region and a respective trench isolation region and does not substantially reside under the charge storage region;
• and
• filling the one or more trench isolation regions with an insulating material.