Solid-state imaging device and manufacturing method therefor
AssigneeSony Corporation
InventorsKaori TAKIMOTO, Masayuki OKADA, Takeshi TAKEDA
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Abstract
Disclosed herein is a solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area rate higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.
Claims9
A solid-state imaging device comprising:
- a first transfer electrode portion;
- and
- a second transfer electrode portion having a pattern area rate higher than that of said first transfer electrode portion;
- said first transfer electrode portion including a plurality of first transfer electrodes having a single-layer structure of metal material,
- said second transfer electrode portion including a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.
A manufacturing method for a solid-state imaging device comprising the steps of:
- forming a plurality of dummy electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon in a first transfer electrode portion and also forming a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon in a second transfer electrode portion having a pattern area rate higher than that of said first transfer electrode portion;
- removing said dummy electrodes formed in said first transfer electrode portion;
- and
- forming a metal film so as to fill with a metal material a plurality of recesses formed by removing said dummy electrodes, and next removing an excess part of said metal material to thereby form a plurality of first transfer electrodes having a single-layer structure of said metal material in said recesses formed in said first transfer electrode portion.
Dependencies are inferred from the claim text.