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US 2010/0140663 A1Published application
CMOS Compatable fabrication of power GaN transistors on a <100> silicon substrate
AssigneeNational Semiconductor Corporation
InventorsPeter J. Hopper, William French
Life of this patent
Estimating the term…
Abstract
In an AlGaN channel transistor formed on a <100> orientation silicon wafer, a hole with walls slanted at 54 degrees is etched into the silicon to provide a <111> orientation substrate surface for forming the AlGaN channel transistor.
Claims20
A high electron mobility transistor (HEMT) that includes a channel region made from a high carrier mobility material, wherein the high carrier mobility material has a higher carrier mobility than silicon, comprising
- a <100> orientation silicon wafer material that is processed to support the high carrier mobility channel region.
A method of making a high electron mobility transistor (HEMT), comprising
- using a <100> orientation substrate to define a semiconductor structure and defining at least one <111> orientation surface in the structure for supporting a channel region of a HEMT.
Dependencies are inferred from the claim text.