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US 2010/0140660 A1Published application
Semiconductor Heterostructure Diodes
AssigneeTransphorm Inc.
InventorsYifeng Wu, Umesh Mishra, Primit Parikh, Rongming Chu, Ilan Ben-Yaacov, Likun Shen
Life of this patent
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Abstract
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
Claims51
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, wherein a 2DEG channel is in the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer;
- and
- two terminals, wherein a first terminal is an anode consisting of a Schottky contact formed with the second III-N material layer and a second terminal is a single cathode in ohmic contact with the 2DEG channel.
1 more element
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, wherein the second III-N material layer differs in composition from the first III-N layer;
- a third III-N material layer on the second III-N material layer and which differs in composition from the second III-N material layer;
- a fourth III-N material layer on the third III-N material layer, wherein a 2DEG channel is induced in the third III-N material layer adjacent to the fourth III-N material layer because of a compositional difference between the third III-N material layer and the fourth III-N material layer;
- two terminals, wherein a first terminal is an anode consisting of a Schottky contact with the fourth III-N material layer and a second terminal is a single cathode in ohmic contact with the 2DEG channel.
2 more elements
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer, wherein the second III-N material layer is compositionally graded and has a channel consisting of a polarization-induced charge distribution;
- an anode consisting of a Schottky contact with the second III-N material layer;
- and
- a single cathode in ohmic contact with the channel.
2 more elements
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, wherein the second III-N material layer is compositionally different from the first III-N material layer;
- a third III-N material layer on the second III-N material layer, wherein a 2DEG channel is in the second III-N material layer adjacent to the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer and the first, second, and third III-N material layers are N-polar or nitrogen-terminated semi-polar material;
- and
- two terminals, wherein one terminal is an anode consisting of a Schottky contact with an N-face of the third III-N material layer and one terminal is a single cathode in ohmic contact with the 2DEG channel.
2 more elements
A diode comprising a III-N semiconductor material, an anode Schottky contact, and a cathode contact, wherein a Schottky barrier height of the anode contact is not substantially reduced when the diode is reverse biased as compared to when the anode and cathode contacts are at the same voltage.
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, wherein the second III-N material layer has a thickness and a first 2DEG channel is in the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer;
- a first insulator layer on the second III-N material layer so that the second III-N material layer is between the first insulator layer and the first III-N material layer, wherein the insulator layer is less than 7 nm thick;
- and
- two terminals, wherein a first terminal is an anode that extends through an entirety of the thickness of the second III-N material layer to contact the first III-N material layer and form a Schottky contact with the first III-N material layer and has extending portions that extend over the first insulator layer and a second terminal is a single cathode in ohmic contact with the first 2DEG channel.
2 more elements
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, wherein the second III-N material layer has a thickness and a first 2DEG channel is in the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer;
- a third III-N material layer, wherein the second III-N material layer is between the first III-N material layer and the third III-N material layer;
- and
- a fourth III-N material layer, wherein the third III-N material layer is between the fourth III-N material layer and the second III-N material layer and a second 2DEG is in the third III-N material layer because of a compositional difference between the third III-N material layer and the fourth III-N material layer;
- and
- two terminals, wherein a first terminal is an anode that extends through an entirety of the thickness of the second III-N material layer to contact the first III-N material layer and form a Schottky contact with the first III-N material layer and has extending portions that extend over the fourth III-N layer and a second terminal is a single cathode in ohmic contact with the first 2DEG channel.
4 more elements
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer, wherein the second III-N material layer has a thickness and is compositionally graded and has a channel consisting of a polarization-induced charge distribution;
- an anode forming a Schottky contact with the second III-N material layer, wherein the anode extends through an entirety of the thickness of the second III-N material layer and has extending portions that extend over the second III-N material layer;
- and
- a single cathode in ohmic contact with the channel.
2 more elements
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, the second III-N material layer having a first thickness, wherein the second III-N material layer is compositionally different from the first III-N material layer;
- a third III-N material layer on the second III-N material layer, the third III-N material layer having a second thickness, wherein a 2DEG channel is in the second III-N material layer adjacent to the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer, and the first, second, and third III-N material layers are N-polar or nitrogen-terminated semi-polar material;
- and
- two terminals, wherein one terminal is an anode which extends through an entirety of the second thickness of the third III-N material layer and through an entirety of the first thickness of the second III-N material layer to contact the first III-N material layer and has extending portions that are on an N-face or nitrogen-terminated semi-polar face of the third III-N material layer, and one terminal is a single cathode in ohmic contact with the 2DEG channel.
2 more elements
Dependencies are inferred from the claim text.