Semiconductor light emitting diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorIl-Kweon JOUNG
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Abstract
A semiconductor LED and a method manufacturing the semiconductor LED are disclosed. The method can include: forming a light emitting structure, which includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together, on a substrate; processing a division groove in the shape of a dotted line from the direction of the substrate or from the direction of the light emitting structure; and dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure. Embodiments of the invention can prevent total reflection for light emitted through the sides, and as a result, the light emitting efficiency can be improved.
Claims5
A semiconductor light emitting diode comprising a light emitting structure, the light emitting structure comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together,
- wherein a first region and a second region having different surface roughness are formed repeatedly on at least one side of the light emitting structure.
A method of manufacturing a semiconductor light emitting diode, the method comprising:
- forming a light emitting structure on a substrate, the light emitting structure comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together;
- processing a division groove in a shape of a dotted line from a direction of the substrate or a direction of the light emitting structure;
- and
- dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure.
Dependencies are inferred from the claim text.