Semiconductor light emitting diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorIl-Kweon JOUNG
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Abstract
A semiconductor LED is disclosed. The semiconductor LED can include a light emitting structure, which can be composed of an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked in said order; a transparent electrode, formed on an upper surface of the light emitting structure; and a P-type electrode, formed on an upper surface of the transparent electrode. An insulator for blocking electric currents can be formed within the light emitting structure, at a position corresponding with the position of the P-type electrode. Certain embodiments of the invention can be used to prevent the occurrences of light reflecting off the lower surface of the P-type electrode, and thereby improve light-emitting efficiency.
Claims4
A semiconductor light emitting diode comprising:
- a light emitting structure, the light emitting structure comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked in said order;
- a transparent electrode formed on an upper surface of the light emitting structure;
- and
- a P-type electrode formed on an upper surface of the transparent electrode,
- wherein the light emitting structure has an insulator formed therein at a position corresponding with a position of the P-type electrode, the insulator configured to block an electric current.
Dependencies are inferred from the claim text.