Light emitting device and method of manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorsHyun Kyong Cho, Sun Kyung KIM, Gyeong Geun Park
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Abstract
The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.
Claims21
A light emitting device, comprising:
- a second electrode layer;
- a light emitting semiconductor layer on the second electrode layer;
- a first photonic crystal embedded in the light emitting semiconductor layer, the first photonic crystal including a mask layer and an air gap on the mask layer;
- and
- a first electrode layer on the first conductive type semiconductor layer.
A method of manufacturing a light emitting device, comprising:
- forming a second electrode layer;
- forming a light emitting semiconductor layer on the second electrode layer;
- embedding a first photonic crystal in the light emitting semiconductor layer, the first photonic crystal including a mask layer and an air gap on the mask layer;
- and
- forming a first electrode layer on the first conductive type semiconductor layer.
Dependencies are inferred from the claim text.