Display device and method for manufacturing the same

A method for manufacturing a display device, the display device including an active matrix substrate on which a plurality of active elements are formed, and a photodiode, wherein the photodiode includes a silicon film in which a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region are provided in a plane direction, the method comprising the steps of:

• (a) forming the silicon film on a base substrate of the active matrix substrate, the silicon film being to become the photodiode;
• (b) forming an insulation film covering the silicon film;
• (c) forming a metal film on the insulation film, and etching the metal film, so as to form two metal lines traversing the silicon film;
• (d) implanting ions of a p-type impurity by using a first mask that has a first opening that exposes a portion that overlaps a region where the p-type semiconductor region is to be formed, a part of the first opening being formed with one of the metal lines;
• and
• (e) implanting ions of an n-type impurity by using a second mask that has a second opening that exposes a portion that overlaps a region where the n-type semiconductor region is to be formed, a part of the second opening being formed with the other one of the metal lines.