Light-emitting diode and method for fabricating the same
AssigneeHuga Optotech Inc.
InventorsChi-Shen LEE, Su-Hui LIN
Life of this patent
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Abstract
The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.
Claims14
1-13. (canceled)
A method of fabricating a light-emitting diode comprising the following steps:
- (a) preparing a substrate;
- (b) forming an epitaxial layer on the substrate, the epitaxial layer having an upper surface, and the upper surface comprising a first region and a second region distinct from the first region;
- (c) forming a mask layer on the first region;
- (d) forming a semiconductor multi-layer structure on the second region, and the semiconductor multi-layer structure comprising a lighting layer;
- (e) removing the mask layer formed on the first region;
- and
- (f) forming a first electrode on the first region of the upper surface of the epitaxial layer.
A method of fabricating a light-emitting diode comprising the following steps:
- (a) preparing a substrate;
- (b) forming an epitaxial layer on the substrate, the epitaxial layer having an upper surface, and the upper surface comprising a first region and a second region distinct from the first region;
- (c) forming a mask layer on the first region;
- (d) forming a semiconductor multi-layer structure on the second region, and the semiconductor multi-layer structure comprising a lighting layer;
- (e) selectively etching a part of the mask layer to make a part of the first region uncovered;
- and
- (f) forming a first electrode on the uncovered region of the first region.
A light-emitting diode comprising:
- a substrate;
- an epitaxial layer formed on the substrate, the epitaxial layer having an upper surface, and the upper surface comprising a first region and a second region distinct from the first region;
- a mask layer formed on a part of the first region to make a part of the first region uncovered;
- a semiconductor multi-layer structure formed on the second region, and the semiconductor multi-layer structure comprising a lighting layer;
- a first electrode formed on the uncovered region of the first region;
- and
- a second electrode formed on the semiconductor multi-layer structure.
Dependencies are inferred from the claim text.