Thin film transistor, fabricating method of thin film transistor and display device using the same

A thin film transistor, comprising:

• a first transistor region and a second transistor region defined on a substrate;
• and
• a first transistor and a second transistor disposed on the first and second transistor regions,
• the first transistor comprising:
• a first semiconductor layer having source, channel, and drain regions defined on the substrate;
• a first insulating film disposed on the first semiconductor layer;
• a first transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the first semiconductor layer;
• and a second insulating film disposed on the first transparent electrode and having an opening exposing the first transparent electrode, and
• the second transistor comprising:
• a second semiconductor layer having source, channel, and drain regions defined on the substrate;
• the first insulating film disposed on the second semiconductor layer;
• a second transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the second semiconductor layer;
• a second gate disposed on the second transparent electrode;
• and the second insulating film disposed on the second gate.

A thin film transistor fabricating method, comprising:

• defining a first transistor region and a second transistor region on a substrate;
• forming a first semiconductor layer and a second semiconductor layer on the first and second transistor regions;
• forming a first insulating film on the first semiconductor layer and the second semiconductor layer;
• forming a first transparent electrode corresponding to a channel region of the first semiconductor layer and a second transparent electrode corresponding to a channel region of the second semiconductor layer on the first insulating film and forming a second gate on the second transparent electrode;
• and
• forming a second insulating film on the first transparent electrode and the second gate.

A thin film transistor fabricating method, comprising:

• defining a first transistor region and a second transistor region on a substrate;
• forming a first semiconductor layer and a second semiconductor layer on the first and second transistor regions;
• forming a first insulating film on the first semiconductor layer and the second semiconductor layer;
• forming a first transparent electrode corresponding to a channel region of the first semiconductor layer and a second transparent electrode corresponding to a channel region of the second semiconductor layer and forming a first gate and a second gate on the first transparent electrode and the second transparent electrode, respectively;
• forming a second insulating film on the first transparent electrode and the second gate;
• forming an opening exposing the first gate on the second insulating film;
• and
• removing the first gate exposed through the opening formed on the second insulating film.