Flat-panel display semiconductor process for efficient manufacturing

A method comprising:

• forming gate, source, and drain regions on a substrate for a display panel using an amorphous silicon or amorphous silicon compatible process, the gate region corresponding to a bottom gate configuration;
• depositing a channel silicon precursor on the gate, source and drain regions in the amorphous silicon or amorphous silicon compatible process;
• and
• irradiating the channel silicon precursor by a laser using a polycrystalline silicon or polycrystalline silicon compatible process.

A structure comprising:

• a substrate;
• a bottom gate deposited on the substrate;
• a dielectric layer deposited on the bottom gate;
• doped source and drain regions deposited on the substrate and formed around the bottom gate;
• and
• a channel silicon precursor layer deposited on the patterned doped amorphous silicon layer and the dielectric layer.