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US 2010/0140619 A1Published application
Photovoltaic device
AssigneesImec, FernUniversitat Hagen
InventorsRenat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
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Abstract
The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
Claims27
A photovoltaic device, the device comprising:
- a first layer comprising an amorphous silicon semiconductor material of n-type conductivity;
- a second layer comprising a crystalline silicon semiconductor material of p-type conductivity;
- and
- a third layer comprising a non-doped semiconductor material, wherein the third layer is situated between and contacts the first layer and the second layer, and wherein the third layer is a translucent porous layer and diffusion barrier having a thickness of from about 1 nm to about 50 nm.
1 more element
Dependencies are inferred from the claim text.