Sensor and method for the manufacture thereof
AssigneeRobert Bosch GmbH
InventorsJochen Reinmuth, Neil Davies, Simon Armbruster, Ando Feyh
Life of this patent
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Abstract
A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer.
Claims15
A sensor, comprising:
- at least one micro-patterned diode pixel including:
- a diode implemented one of in, on, or under a diaphragm, wherein the diaphragm is implemented above a cavity, and wherein the diode is implemented in a polycrystalline semiconductor layer;
- at least two supply leads contacting the diode, wherein the supply leads are implemented at least in part one of in, on, or under the diaphragm.
A method for manufacturing a sensor, comprising:
- providing a lower insulating layer on a substrate;
- selectively doping and patterning a polycrystalline semiconductor layer having at least one diode;
- applying at least one upper insulating layer on the polycrystalline semiconductor layer;
- providing a conductive contacting layer contacted to the polycrystalline semiconductor layer;
- at least partly exposing the polycrystalline semiconductor layer and etching openings in the polycrystalline semiconductor layer;
- and
- etching a cavity beneath the polycrystalline semiconductor layer to implement a diaphragm including the at least one diode.
Dependencies are inferred from the claim text.