Transistor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-ho Park, Chang-jung Kim, I-hun Song, Sang-wook Kim, Jae-chul Park
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Abstract
Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
Claims23
A transistor comprising:
- one or more first transistors on a substrate, wherein each of the one or more first transistors includes
- a channel layer which is formed of an oxide semiconductor,
- a source and a drain which separately contact two ends of the channel layer in a length direction of the channel layer, and
- a gate which covers top and side surfaces of the channel layer in a width direction of the channel layer.
A method of manufacturing a transistor including one or more first transistors on a substrate, wherein forming the one or more first transistors comprises:
- forming an oxide semiconductor pattern on the substrate;
- forming source/drain material layers on both sides of the oxide semiconductor pattern;
- forming one or more structures each having a source, a drain, and a channel layer between the source and the drain by patterning the oxide semiconductor pattern and the source/drain material layers;
- and
- forming a gate which covers top and side surfaces of the channel layer.
A method of forming a transistor, the method comprising forming one or more first transistors on a substrate, wherein forming the one or more first transistors comprises:
- forming one or more oxide semiconductor patterns on the substrate;
- forming a gate which covers top and side surfaces of center portions of the one or more oxide semiconductor patterns;
- and
- forming a source and a drain in two side portions of the one or more oxide semiconductor patterns which are not covered by the gate.
Dependencies are inferred from the claim text.