Thin film transistors incorporating interfacial conductive clusters
Assignee3M Innovative Properties Company
InventorsRobert S. Clough, Tzu-Chen Lee, Dennis E. Vogel, Peiwang Zhu
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Abstract
A field effect transistor includes a thin layer of discontinuous conductive clusters between the gate dielectric and the active layer. The active layer can include an organic semiconductor or a blend of organic semiconductor and polymer. Metals, metal oxides, predominantly non-carbon metallic materials, and/or carbon nanotubes may be used to form the layer of conductive clusters. The conductive clusters improve transistor performance and also facilitate transistor fabrication.
Claims20
A field effect transistor, comprising:
- an active layer comprising a semiconductor;
- gate, source, and drain contacts electrically coupled to the active layer;
- a gate dielectric arranged in relation to the gate contact;
- and
- a layer of discontinuous interfacial conductive clusters arranged between the gate dielectric and the active layer.
A field effect transistor, comprising:
- an active layer comprising a semiconductor material and carbon nanotubes;
- gate, source, and drain contacts electrically coupled to the active layer;
- a dielectric material arranged relative to the gate contact;
- and
- a layer of discontinuous interfacial conductive material arranged between the dielectric material and the active layer.
A method for fabricating a field effect transistor having gate, source and drain contacts, the method comprising:
- forming an active layer comprising a semiconductor;
- forming a dielectric between the active layer and the gate contact;
- and
- forming a layer of discontinuous interfacial conductive clusters between the dielectric and the active layer.
Dependencies are inferred from the claim text.