US 2010/0140599 A1Published application

Semiconductor device, method for manufacturing semiconductor device, and display

AssigneesKyushu University, Idemitsu Kosanco., Ltd.

InventorsKoki Yano, Hajime Nakanotani, Chihaya Adachi

Life of this patent

Estimating the term…

A semiconductor device includes an organic semiconductor layer 10 and an oxide semiconductor layer 11, and emits light.

Dependent claims

A semiconductor device which comprises an organic semiconductor layer and an oxide semiconductor layer, and emits light.

Dependencies are inferred from the claim text.

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10K 10/466
Insulated gate field-effect transistors [IGFETs]: lateral bottom-gate IGFETs comprising only a single gate
H10K 10/486
Characterised by the channel regions: the channel region comprising two or more active layers, e.g. forming pn heterojunctions
H10K 50/30
Organic light-emitting devices: organic light-emitting transistors

No related US applications are recorded in the indexed filing history.

Loading patent…