High-Injection Heterojunction Bipolar Transistor
OwnerDaniel N. Carothers, Andrew T.S. Pomereneinventors
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Abstract
A method for manufacturing high-injection heterojunction bipolar transistor capable of being used as a photonic device is disclosed. A sub-collector layer is formed on a substrate. A collector layer is then deposited on top of the sub-collector layer. After a base layer has been deposited on top of the collector layer, a quantum well layer is deposited on top of the base layer. An emitter is subsequently formed on top of the quantum well layer.
Claims10
A method for manufacturing a high-injection heterojunction bipolar transistor capable of being used as a photonic device, said method comprising:
- forming a sub-collector layer on a substrate;
- depositing a collector layer on top of said sub-collector layer;
- depositing a base layer on top of said collector layer;
- depositing a quantum well layer on top of said base layer;
- and
- forming an emitter on top of said quantum well layer.
A high-injection heterojunction bipolar transistor comprising:
- a collector;
- an emitter;
- a base;
- and
- at least one quantum well located between said emitter and said base.
Dependencies are inferred from the claim text.