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AssigneeNippon Mining & Metals Co., Ltd.
InventorsMasakatsu Ikisawa, Masataka Yahagi, Kozo Osada, Takashi Kakeno
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Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.
A sintered compact of composite oxide substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, wherein resistivity thereof is 0.2 mΩcm or less.
(canceled)
An amorphous film of composite oxide substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
A method of producing a crystalline film of composite oxide, wherein after producing an amorphous film of composite oxide substantially comprised of indium, tin, calcium and oxygen in that tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, the film is crystallized by annealing at a temperature of 260° C. or lower.
A crystalline film of composite oxide substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
A sintered compact of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen, wherein resistivity thereof is 0.2 mΩcm or less.
(canceled)
An amorphous film of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen.
A method of producing a crystalline film of composite oxide, wherein after producing an amorphous film of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen in that tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen, the film is crystallized by annealing at a temperature of 260° C. or lower.
A crystalline film of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen.
Dependencies are inferred from the claim text.