Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAtsushi HIROSE
Life of this patent
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Abstract
In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.
Claims1
A semiconductor device comprising:
- a current mirror circuit;
- and
- a photoelectric conversion device electrically connected to the current mirror circuit,
- wherein the current mirror circuit comprises:
- a first transistor having a first gate electrode, a first source electrode, and a first drain electrode;
- a second transistor having a second gate electrode, a second source electrode, and a second drain electrode;
- a first terminal electrically connected to the first drain electrode and the second drain electrode;
- a second terminal electrically connected to the first source electrode and the second source electrode;
- a first resistor in a first path from the first terminal to the second terminal through the first drain electrode and the first source electrode;
- and
- a second resistor in a second path from the first gate electrode to a contact point,
- wherein the first gate electrode is electrically connected to the second electrode through the contact point,
- wherein the first electrode is electrically connected to the first drain electrode, and
- wherein each of the first gate electrode, the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the second drain electrode have a parasitic resistor.
Dependencies are inferred from the claim text.