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US 2010/0140219 A1Published application
Electrostatic force assisted deposition of graphene
AssigneeThe Regents of the University of California
InventorXiaogan Liang
Life of this patent
Estimating the term…
Abstract
An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.
Claims12
A method of depositing graphene comprising:
- bringing a stamp into contact with a substrate over a contact area, the stamp having at least a few layers of the graphene covering the contact area;
- developing an electric field over the contact area;
- and
- removing the stamp from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.
1 more element
A method of depositing graphene comprising:
- bringing a stamp into contact with a dielectric surface of a substrate over a contact area, the stamp having at least a few layers of the graphene covering the contact area;
- applying a voltage from the substrate below the dielectric layer to the stamp above the contact area;
- and
- removing the stamp from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.
1 more element
Dependencies are inferred from the claim text.