Nanoscale spintronic chemical sensor
AssigneeUniversity of South Carolina
InventorsThomas M. Crawford, Samir Y. Garzon
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Abstract
In general, the present disclosure is directed toward a novel hybrid spintronic device for converting chemical absorption into a change in magnetoresistance. This device uses a novel magnetic material which depends on the attachment of an organic structure to a metallic film for its magnetism. Changes in the chemical environment lead to absorption on the surface of this organometallic bilayer and thus modify its magnetic properties. The change in magnetic properties, in turn, leads to a change in the resistance of a magnetoresistive structure or a spin transistor structure, allowing a standard electrical detection of the chemical change in the sensor surface.
Claims14
A spintronic chemical sensor comprising
- a multilayer film comprising an organically capped metal film, wherein the multilayer sensor displays permanent magnetism;
- and
- a ferromagnet configured to provide a current to the organically capped metal film.
A spintronic chemical sensor having a magnetic tunnel junction device geometry, the sensor comprising:
- a metal-thiol-metal trilayer defining a top and a bottom, wherein sulfur atoms are located on top of the structure as well as the bottom, wherein organic tails act as an insulating tunnel barrier between the metal on the top and the metal on the bottom;
- a top lead film adjacent to the top of the metal-thiol-metal trilayer;
- a ferromagnet layer adjacent to the bottom of the metal-thiol-metal trilayer;
- and
- an antiferromagnetic layer adjacent to the ferromagnet layer.
A spintronic chemical sensor having a magnetic tunnel junction device geometry, the sensor comprising:
- multilayer sensor comprising an organically capped metal film, wherein the bilayer sensor displays permanent magnetism, the multilayer sensor having a top and a bottom;
- a first ferromagnet layer adjacent to the top of the multilayer sensor;
- a second ferromagnet layer adjacent to the bottom of the multilayer sensor;
- and
- an antiferromagnetic layer adjacent to the second ferromagnet layer.
Dependencies are inferred from the claim text.