Selenium containing electrodeposition solution and methods
AssigneeSoloPower, Inc.
InventorsCyprian E. Uzoh, Serdar Aksu
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Abstract
The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions.
Claims29
An electrodeposition solution to electrodeposit a Group IB-Group VIA thin film, comprising:
- a solvent;
- a Group IB material source that dissolves in the solvent and provides a Group IB material;
- a Group VIA material source that dissolves in the solvent and provides a Group VIA material;
- and
- at least one complexing that forms a complex ion of the Group IB material wherein such complex ion dissolves in the solvent;
- an adhesion promoting agent;
- a corrosion inhibitor;
- and
- wherein the pH of the electrodeposition solution is in the range of 1-13.
The electrodeposition solution of claim 11, wherein the adhesion promoting agent comprises at least one of 1,4-Bis(3-aminopropyl) piperazine and N,N′ Bis(3-aminopropyl) ethylenediamine and any possible mixture of these.
A method of electrodepositing an adherent film comprising copper selenide alloy material on a conductive layer, comprising:
- providing an electrodeposition solution comprising a solvent, a copper ion source, a selenium ion source, at least one complexing agent and at least one adhesion promoting agent, the adhesion promoting agent suppressing the formation of colloidal particles on the substrate and in the plating solution, wherein the electrodeposition solution has a pH value in the range of 1-13;
- contacting the electrodeposition solution with the surface of the conductive layer and an anode;
- establishing a potential difference between the anode and the conductive layer;
- and
- electrodepositing the copper selenide film on the surface of the conductive layer.
A method of electrodepositing a precursor on a conductive layer, comprising:
- electrodepositing a copper selenide film on the conductive layer using an electrodeposition solution, the electrodeposition solution comprising a copper ion source, a selenium ion source, at least one complexing agent, at least one adhesion promoting agent;
- depositing a thin film including a Group IB material, at least one Group IIIA material onto the copper selenide film, wherein the step of depositing uses a physical vapor deposition technique.
Dependencies are inferred from the claim text.