Compound-type thin film, method of forming the same, and electronic device using the same
AssigneesNational University Corporation Tohoku University, Rohm Co., Ltd., Tokyo Electron Limited, Ube Industries, Ltd.
InventorsTadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki
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Abstract
An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
Claims31
A thin film forming method comprising supplying a gas containing at least an organometallic material gas into a plasma generated using a microwave-excited high-density plasma generator, thereby forming, on a film forming object, a thin film of at least one of a II-VI group compound, a III-V group compound, and a IV group compound.
5-10. (canceled)
18-20. (canceled)
(canceled)
A thin film forming apparatus comprising a microwave-excited high-density plasma generator and a supply system for supplying a gas containing an organometallic material gas into a plasma generated in the microwave-excited high-density plasma generator, the supply system being temperature-controlled using a relationship between a vapor pressure and a temperature of the organometallic material gas.
Dependencies are inferred from the claim text.