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US 2010/0139759 A1Published application
Optical device
AssigneeKobenhavns Universitet
InventorMartin Aagesen
Life of this patent
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Abstract
The present invention relates to an optical device and to a method of fabricating the same. In embodiments, the invention relates to a photovoltaic device or solar cell. The optical device comprises a first electrode and a second electrode and an active element disposed between the first and second electrodes. The active element comprising a plurality of semiconducting structures extending in a lengthwise direction from the first electrode and being in contact with the first and second electrodes; the active element comprises an np-junction. For the semiconducting structures, at least a part of the structures is of a general plate or flake shape. In embodiments, the semiconducting structures have at least one characteristic dimension in the nanometer range.
Claims35
1-34. (canceled)
An optical device comprising:
- a first electrode;
- a second electrode, the first and/or second electrode being transmissive for radiation in a first wavelength range;
- and
- an active element having an n-p junction disposed between the first and second electrodes, the active element comprising a plurality of semiconducting structures grown in a lengthwise direction out of a planar surface on the first electrode and being in electrical contact with the first and second electrodes;
- wherein each semiconducting structure comprises a plate-like portion in which a width of the structure in a first direction across the planar surface is greater than a thickness of the structure in a second direction across the planar surface that is orthogonal to the first direction, and wherein the plate-like portion includes a tapering portion in which the width of the structure decreases as it approaches the second electrode.
2 more elements
A solar cell comprising:
- a first electrode;
- a second electrode, the first and/or second electrode being transmissive for radiation in a first wavelength range;
- and
- an active element having an n-p junction disposed between the first and second electrodes, the active element comprising a plurality of semiconducting structures grown in a lengthwise direction out of a planar surface on the first electrode and being in electrical contact with the first and second electrodes;
- wherein each semiconducting structure comprises a plate-like portion in which a width of the structure in a first direction across the planar surface is greater than a thickness of the structure in a second direction across the planar surface that is orthogonal to the first direction, and wherein the plate-like portion includes a tapering portion in which the width of the structure decreases as it approaches the second electrode.
2 more elements
A photovoltaic device comprising:
- a first electrode;
- a second electrode, the first and/or second electrode being transmissive for radiation in a first wavelength range;
- and
- an active element having an n-p junction disposed between the first and second electrodes, the active element comprising a plurality of semiconducting structures grown in a lengthwise direction out of a planar surface on the first electrode and being in electrical contact with the first and second electrodes;
- wherein each semiconducting structure comprises a plate-like portion in which a width of the structure in a first direction across the planar surface is greater than a thickness of the structure in a second direction across the planar surface that is orthogonal to the first direction, and wherein the plate-like portion includes a tapering portion in which the width of the structure decreases as it approaches the second electrode.
2 more elements
A light emitting device comprising:
- a first electrode;
- a second electrode, the first and/or second electrode being transmissive for radiation in a first wavelength range;
- and
- an active element having an n-p junction disposed between the first and second electrodes, the active element comprising a plurality of semiconducting structures grown in a lengthwise direction out of a planar surface on the first electrode and being in electrical contact with the first and second electrodes;
- wherein each semiconducting structure comprises a plate-like portion in which a width of the structure in a first direction across the planar surface is greater than a thickness of the structure in a second direction across the planar surface that is orthogonal to the first direction, and wherein the plate-like portion includes a tapering portion in which the width of the structure decreases as it approaches the second electrode.
2 more elements
A method of fabricating an optical device, the method comprising:
- forming a plurality of nucleation centres on a planar surface on a first electrode;
- depositing material to grow a plurality of semiconducting structures at the nucleation centres in a lengthwise direction out of the planar surface on the first electrode;
- and
- forming a second electrode such that the semiconducting structure are disposed between and in electrical contact with the first and second electrodes,
- characterised in that:
- growing each semiconducting structure includes:
- forming a plate-like portion in which a width of the structure in a first direction across the planar surface is greater than a thickness of the structure in a second direction across the planar surface that is orthogonal to the first direction, and
- forming a tapering portion of the plate-like portion in which the width of the structure decreases as it approaches the second electrode.
5 more elements
Dependencies are inferred from the claim text.