Method and Apparatus for Circuit Simulation

A method of circuit simulation comprising the steps of:

• a) receiving inputs to obtain a normalized adjusted drain voltage data, normalized adjusted gate voltage data, and normalised adjusted temperature data to determine a current flowing through a transistor;
• b) determining the current flowing through a transistor based on an initial temperature value for each transistor in the integrated circuit;
• c) determining a transistor power value;
• d) determining a temperature change value for the transistor in dependence upon the transistor current value and the transistor power value;
• e) determining an new temperature value from the initial temperature value and the temperature change value;
• and
• f) repeat steps a) through e) using the new temperature value as the initial temperature value.

An apparatus of circuit simulation containing:

• a) a simulator;
• b) a net table;
• c) a transistor table;
• d) an array containing normalized adjusted temperature data;
• e) an array containing normalized adjusted gate voltage data for n channel MOS transistors;
• f) an array containing normalized adjusted gate voltage data for p channel MOS transistors;
• g) an array containing normalized adjusted drain data for n channel MOS transistors;
• and
• h) an array containing normalized adjusted drain data for p channel MOS transistors.