Plasma oxidation processing method, plasma processing apparatus and storage medium
AssigneeTokyo Electron Limited
InventorsYoshiro Kabe, Takashi Kobayashi, Toshihiko Shiozawa, Junichi Kitagawa
Life of this patent
Estimating the term…
Abstract
A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.
Claims18
A plasma oxidation processing method for forming a silicon oxide film by subjecting a processing object having a three-dimensional pattern to oxidation processing with a plasma, said method comprising:
- setting a processing object having a patterned irregularity on a mounting table provided in a processing chamber of a plasma processing apparatus;
- supplying a processing gas, containing oxygen in an amount of not less than 0.5% and less than 10%, into the processing chamber and keeping the pressure in the chamber at 1.3 to 665 Pa;
- and
- forming a plasma of the processing gas while applying a high-frequency power to the mounting table and thereby applying a high-frequency bias to the process object, thereby carrying out oxidation processing of the processing object with the plasma
- wherein output of the high-frequency power is 5 to 3600 W,
- wherein frequency of the high-frequency power is 300 kHz to 60 MHz, and
- wherein processing temperature in the processing chamber is 200 to 800° C.
(canceled)
(canceled)
(canceled)
A plasma oxidation processing apparatus for carrying out plasma processing of a processing object, comprising:
- an processing chamber;
- an exhaust device configured to evacuate the processing chamber to regulate pressure in the processing chamber;
- a mounting table, disposed in the processing chamber, for placing the processing object thereon;
- a gas introduction member connected to a gas supply mechanism to supply a processing gas containing oxygen into the processing chamber;
- a plasma generation mechanism for generating a plasma of the processing gas in the processing chamber;
- and
- a high-frequency power source configured to apply a high-frequency power to the mounting table thereby to apply a high-frequency bias to the processing object placed on the mounting table;
- a control section configured to control the apparatus in such a manner that the oxygen content in the processing gas is made not less than 0.5% and less than 10% and the pressure in the processing chamber is kept at 1.3 to 665 Pa, and that the plasma of the processing gas is formed while applying a high-frequency power to the mounting table and thereby applying a high-frequency bias to the processing object, so that oxidation processing of the processing object with the plasma is carried out.
(canceled)
Dependencies are inferred from the claim text.