Film deposition apparatus, film deposition method, semiconductor device fabrication apparatus, susceptor for use in the same, and computer readable storage medium
AssigneeTokyo Electron Limited
InventorMANABU HONMA
Life of this patent
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Abstract
A disclosed semiconductor device fabrication apparatus includes a chamber where a predetermined process is carried out with respect to a substrate; a transfer arm that includes claw portions for supporting a lower peripheral surface portion of the substrate and that moves into and out from the chamber; and a susceptor that includes a substrate receiving portion in which the substrate is placed, and a step portion provided to allow the claw portions to move to a position lower than an upper surface of the substrate receiving portion.
Claims18
A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:
- a transfer arm including a claw portion for supporting a lower peripheral surface portion of the substrate, wherein the transfer arm is movable into and out from the chamber;
- a susceptor rotatably provided in the chamber, wherein the susceptor includes a substrate receiving portion provided, in one surface of the susceptor, for the substrate to be placed in, and a step portion provided to allow the claw portion to move to a position lower than an upper surface of the substrate receiving portion;
- a first reaction gas supplying portion configured to supply a first reaction gas to the one surface;
- a second reaction gas supplying portion configured to supply a second reaction gas to the one surface, wherein the second reaction gas supplying portion is separated from the first reaction gas supplying portion along a rotation direction of the susceptor;
- a separation area located along the rotation direction between a first process area in which the first reaction gas is supplied and a second process area in which the second reaction gas is supplied;
- a center area that is located substantially in a center portion of the chamber in order to separate the first process area and the second process area, and has an ejection hole that ejects a first separation gas along the one surface;
- and
- an evacuation opening provided in the chamber in order to evacuate the chamber;
- wherein the separation area includes a separation gas supplying portion that supplies a second separation gas, and a ceiling surface that creates in relation to the one surface of the susceptor a thin space in which the second separation gas may flow from the separation area to the process area side in relation to the rotation direction.
A semiconductor device fabrication apparatus, comprising:
- a chamber where a predetermined process is carried out with respect to a substrate;
- a transfer arm that includes claw portions for supporting a lower peripheral surface portion of the substrate and that moves into and out from the chamber;
- and
- a susceptor that includes a substrate receiving portion in which the substrate is placed, and a step portion provided to allow the claw portions to move to a position lower than an upper surface of the substrate receiving portion.
A susceptor on which a substrate subject to a predetermined process in a semiconductor device fabrication apparatus is placed, the susceptor comprising:
- a substrate receiving portion on which the substrate is placed;
- and
- a step portion provided to allow a claw portion of a substrate transport arm to move to a position lower than an upper surface of the susceptor, the claw portion supporting a lower peripheral surface portion of the substrate.
A film deposition method for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition method comprising steps of:
- supporting a lower peripheral surface portion of the substrate with a claw portion provided in a transfer arm and transferring the substrate into the chamber with the transfer arm;
- placing the substrate on a susceptor by using a step portion of the susceptor to move the claw portion to a position lower than an upper surface of a substrate receiving portion, wherein the susceptor is rotatably provided in the chamber, and includes the substrate receiving portion, in one surface of the susceptor, for the substrate to be placed in, and the step portion provided to allow the claw portion of the transfer arm to move to a position lower than the upper surface of the substrate receiving portion;
- rotating the susceptor on which the substrate is placed;
- supplying a first reaction gas from a first reaction gas supplying portion to the susceptor;
- supplying a second reaction gas from a second reaction gas supplying portion to the susceptor, the second reaction gas supplying portion being separated from the first reaction gas supplying portion along a rotation direction of the susceptor;
- supplying a first separation gas from a separation gas supplying portion provided in a separation area located between a first process area in which the first reaction gas is supplied from the first reaction gas supplying portion and a second process area in which the second reaction gas is supplied from the second reaction gas supplying portion, in order to flow the first separation gas from the separation area to the process area relative to the rotation direction of the susceptor in a thin space created between a ceiling surface of the separation area and the susceptor;
- supplying a second separation gas from an ejection hole formed in a center area located in a center portion of the chamber;
- and
- evacuating the chamber.
Dependencies are inferred from the claim text.