Dielectric Barrier Deposition Using Oxygen Containing Precursor
AssigneeAir Products and Chemicals, Inc.
InventorsLaura M. Matz, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Dino Sinatore
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Abstract
A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.
Claims30
A process for forming a film on a substrate comprising:
- providing a linear alkylalkoxysilane precursor of the formula:
- RxR′y(OR″)z(OR″′)aSi
- wherein R, R″ and R″′ are each individually selected from the group consisting of methyl, ethyl or vinyl;
- R′ is selected from the group consisting of hydrogen, methyl, ethyl or vinyl;
- and x, z and a are each individually 1-3 and y is 0-2, wherein x+y+z+a=4;
- forming a film on a substrate using chemical vapor deposition reaction of the precursor where a residence time of a flow of the precursor in the reaction is less than or equal to 85 msec, wherein the density of the film is greater than 1.5 g/cc. and the dielectric constant is less than 6.0.
A process for forming a barrier dielectric film between a dielectric film and a copper feature of an integrated circuit, comprising the steps of;
- providing an integrated circuit substrate having a dielectric film prior to the formation of a copper feature;
- contacting the substrate with a barrier dielectric film precursor selected from the group consisting of diethoxymethylsilane, dimethylidethoxysilane and mixtures thereof, and a chemical selected from the group consisting of hydrogen, ammonia and mixtures thereof;
- forming a barrier dielectric film on the substrate using plasma enhanced chemical vapor deposition reaction, wherein a residence time of a flow of the precursor and the chemical in the reaction is less than or equal to 85 msec;
- forming a copper feature on the barrier dielectric film;
- wherein the resulting barrier dielectric film has a density greater than 1.5 g/cc.
A process for forming a barrier dielectric film between a dielectric film and a copper feature of an integrated circuit, comprising the steps of;
- providing an integrated circuit substrate having a dielectric film having a copper feature;
- depositing an interface layer on the dielectric film having a copper feature capable of protecting the copper feature from oxidation;
- contacting the substrate with a barrier dielectric film precursor selected from the group consisting of diethoxymethylsilane, dimethyldiethoxysilane and mixtures thereof, and a chemical selected from the group consisting of hydrogen, ammonia and mixtures thereof;
- forming a barrier dielectric film on the substrate using a plasma enhanced chemical vapor deposition reaction of the barrier dielectric precursor where a residence time of a flow of the precursor in the reaction is less than or equal to 85 msec;
- wherein the resulting barrier dielectric film has a density greater than 1.5 g/cc.
Dependencies are inferred from the claim text.