Process for manufacturing semiconductor integrated circuit device

A process for manufacturing a semiconductor integrated circuit device, comprising:

• (a) forming an insulating film over a first major surface of a water;
• (b) forming a wiring groove in the insulating film by patterning the insulating film;
• (c) forming a metal layer including copper as its principal component, over the insulating film and in the wiring groove;
• (d) removing the metal layer outside the wiring groove by a chemical mechanical polishing method using a polishing slurry, so as to leave the metal layer in the wiring groove, said removing being performed in a wafer processing apparatus;
• (e) performing a pre-cleaning treatment to the first major surface of the wafer with pure water in order to remove the polishing slurry;
• (f) after (e), making the first major surface of the wafer wet by a wet treatment and transferring the wafer to a post cleaning section through a light shielding structure in the wafer processing apparatus;
• (g) after (f), performing a post cleaning treatment to the first major surface of the wafer with a liquid chemical or pure water in the post cleaning section;
• and
• (h) making the first major surface of the water dry,
• wherein (d) and (h) are performed by a single wafer processing method.