Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device including a wiring layer, comprising the steps of:

• forming an insulating film;
• forming an opening in the insulating film;
• forming a first conductive film over the insulating film and in the opening in the insulating film;
• dropping a droplet containing a conductive material into the opening or to the periphery thereof, thereby forming a conductive film by baking;
• selectively etching the conductive film to form a second conductive layer;
• forming a third conductive film over the first conductive film and the second conductive layer;
• and
• etching the first conductive film and the third conductive film using one mask to form a first conductive layer and a third conductive layer,
• wherein a surface of the first conductive film is subjected to a surface treatment for reducing the contact angle of the droplet to be dropped before dropping the droplet.

A method for manufacturing a semiconductor device including a wiring layer, comprising the steps of:

• forming an insulating film;
• forming an opening in the insulating film;
• dropping a droplet containing a conductive material into the opening;
• heating the conductive material in the opening to form a first conductive layer embedded in the opening of the insulating film;
• and
• forming a second conductive layer covering a top surface of the first conductive layer.