Selective deposition of noble metal thin films
AssigneeASM International N.V.
InventorsHannu Huotari, Marko Tuominen, Miika Leinikka
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Abstract
Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
Claims12
A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface, the method comprising:
- contacting the first and second surface of the substrate with a gaseous noble metal precursor;
- providing a second reactant gas pulse to the reaction chamber;
- and
- repeating until a thin film of a desired thickness is obtained selectively on the first surface relative to the second surface,
- wherein the first surface comprises a material selected from the group consisting of metals, metal nitrides, metal carbides, metal borides, conductive oxides and mixtures thereof;
- and
- wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400° C.
A method for selectively depositing a noble metal layer on a substrate comprising a first surface and a second insulating surface, the first surface comprising a high k material, metal, metal nitride or conductive metal oxide, the method comprising depositing a layer comprising a noble metal on the first surface relative to the second surface using an atomic layer deposition (ALD) process, wherein both the first surface and second surface are contacted with each of at least two reactants.
Dependencies are inferred from the claim text.