Sub-critical shear thinning group iv based nanoparticle fluid

A method for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid, the silicon substrate comprising a front surface and a rear surface, the method comprising:

• texturing the silicon substrate;
• cleaning the silicon substrate;
• depositing the sub-critical shear thinning nanoparticle fluid on the front surface;
• baking the silicon substrate at a first temperature of between about 150° C. to about 800° C. and for a first time period between about 1 minute and about 60 minutes;
• exposing the silicon substrate to a dopant source in a diffusion furnace with an atmosphere of POCl3, N2, and O2, at a second temperature of between about 800° C. and about 950° C., and for a second time period of between about 30 minutes and about 180 minutes, wherein a PSG layer is formed;
• removing the PSG layer;
• depositing an anti-reflection coating on the front surface;
• and
• depositing a set of front metal contacts on the front surface and a set of rear metal contacts on the rear surface.