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US 2010/0136768 A1Published application
Method for simultaneous doping and oxidizing semiconductor substrates and the use thereof
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsDaniel Biro, Ralf Preu, Jochen Rentsch
Life of this patent
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Abstract
The invention relates to a method for simultaneous doping and oxidizing semiconductor substrates and also to doped and oxidized semiconductors substrates produced in this manner. Furthermore, the invention relates to the use of this method for producing solar cells.
Claims30
1-30. (canceled)
A method for simultaneous doping and oxidizing a semiconductor substrate having at least one surface, the method comprising the steps of:
- coating at least a region of the at least one surface with a layer comprising at least one doping agent;
- and
- subjecting the semiconductor substrate to a thermal treatment in an atmosphere comprising an oxidant for the semiconductor substrate;
- wherein the doping agent diffuses into a volume of the semiconductor substrate and uncoated surface regions of the semiconductor substrate are oxidized as a result of the thermal treatment.
1 more element
The method of claim 54, wherein the atmosphere comprises trans-1,2-dichloroethylene.
Dependencies are inferred from the claim text.