Semiconductor Devices and Methods of Manufacturing Thereof
AssigneeInfineon Technologies AG
InventorJin-Ping Han
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Abstract
Semiconductor devices and methods of manufacturing thereof are disclosed. A preferred embodiment includes a semiconductor device comprising a workpiece, the workpiece including a first region and a second region proximate the first region. A first material is disposed in the first region, and at least one region of a second material is disposed within the first material in the first region, the second material comprising a different material than the first material. The at least one region of the second material increases a first stress of the first region.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- providing a workpiece, the workpiece including a first region and a second region proximate the first region;
- disposing a first stress-increasing material in the first region;
- and
- forming at least one region of a second stress-increasing material within the first stress-increasing material in the first region, the second stress-increasing material comprising a different material than the first stress-increasing material, wherein the first stress-increasing material and the at least one region of the second stress-increasing material in the first region increase a stress of the second region proximate the first region.
A method of fabricating a transistor, the method comprising:
- disposing a gate dielectric material over a workpiece;
- disposing a gate material over the gate dielectric material;
- patterning the gate material and the gate dielectric material to form a gate and a gate dielectric;
- forming at least one spacer over sidewalls of the gate and the gate dielectric;
- removing a portion of the workpiece proximate a first side and a second side of the gate and gate dielectric to form a first recess and a second recess;
- filling at least a portion of the first recess and the second recess with a first material;
- and
- forming at least one region of a second material within the first material in the first recess and the second recess, wherein the first material and the at least one region of the second material in the first recess comprise a source region, and wherein the first material and the at least one region of second material in the second recess comprise a drain region.
A method of fabrication a source or drain of a transistor, the method comprising:
- forming a recess proximate a channel region in a semiconductor body;
- filling the recess partially with a first stress-increasing material;
- forming a first region with a second stress-increasing material within the first stress-increasing material in the recess.
Dependencies are inferred from the claim text.