Method for aligning elongated nanostructures
AssigneePalo Alto Research Center Incorporated
InventorsMichael L. Chabinyc, William S. Wong
Life of this patent
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Abstract
A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.
Claims20
A method of depositing elongated nanostructures comprising the operations of:
- forming a solution of elongated nanostructures suspended in a printable liquid;
- aligning a printhead over a patterned substrate;
- printing droplets of the solution into predetermined positions on the substrate, the substrate patterned such that the droplets form an elongated shape, the elongated shape to approximately align the elongated nanostructures.
12-19. (canceled)
A method comprising:
- depositing gate lines over a substrate;
- depositing a dielectric material over the gate lines;
- patterning an area on the dielectric material between the gate lines;
- and
- ejecting a droplet of solution containing nanowires into the area.
A method comprising:
- depositing gate lines on a substrate;
- depositing a dielectric material over the gate lines;
- depositing a droplet of solution containing nanowires on an area of the dielectric material around center of each of the gate lines;
- and
- treating surface of the dielectric material such that a region between the gate lines become hydrophobic, the hydrophobic region elongating the droplet.
A method comprising:
- forming an array of gate lines;
- patterning a dielectric layer to form a hydrophilic region running approximately perpendicular to the gate lines;
- and
- depositing droplets containing nanowires on the hydrophilic region.
Dependencies are inferred from the claim text.