Method for fabricating thin film transistor
AssigneeLG Display Co., Ltd.
InventorsWoong GI JUN, Gee Sung CHAE, Jae Seok HEO
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Abstract
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
Claims15
A method for fabricating a thin film transistor (TFT) on a substrate, comprising:
- forming a gate electrode;
- forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode;
- sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound;
- and
- forming source and drain electrodes at both sides of the semiconductor layer.
15-42. (canceled)
Dependencies are inferred from the claim text.