Back to results
US 2010/0136752 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTsutomu Tezuka
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a Si substrate, an insulating film formed on one part of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex (0<x≦1) thin film formed on the insulating film in direct contact with the insulating film, and substantially flush with top of the bulk Si region, a first field effect transistor fabricated in the bulk Si region, and a second field effect transistor fabricated in the Si1-xGex thin film.
Claims21
-17. (canceled)
A method of manufacturing a semiconductor device comprising:
- preparing a Si thin film on an insulating film to produce a first semiconductor structure;
- forming a Si1-yGey(0<y≦1) thin film on one part of the Si thin film to produce a second semiconductor structure;
- annealing the second semiconductor structure in ambient atmosphere including oxygen to oxidize the Si1-yGey thin film on the Si thin film for forming a Si oxide film on top thereof and a Si1-xGex(0<x≦1, x>y) thin film coming in direct contact with the insulating film;
- removing the Si oxide film;
- fabricating a first field effect transistor in the Si thin film or isolated Si films from the Si thin film;
- and
- fabricating a second field effect transistor in the Si1-xGex thin film.
4 more elements
Dependencies are inferred from the claim text.